• DocumentCode
    1850581
  • Title

    High repetition frequency power nanosecond pulse generation

  • Author

    Kardo-Sysoev, A.F. ; Zazulin, S.V. ; Efanov, N.M. ; Lelitov, O. ; Kriklenko, A.V.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    1
  • fYear
    1997
  • fDate
    June 29 1997-July 2 1997
  • Firstpage
    420
  • Abstract
    A new type of semiconductor opening switch-drift step recovery diodes (DSRD)-gave rise to a new generation of all solid state nanosecond pulsers with peak power up to a hundred megawatts. The main advantages of these switches are: long life, very good time stability (low jitter), small sizes, and a respectively simple technology of manufacturing. They have a very important feature as well: the total length of both plasma pumping and plasma removing cycles are several hundreds (100-300) of nanoseconds even for high power pulse generation. After the end of the plasma removing cycle, DSRD is in an initial opening state and is ready for the next cycle. Generally speaking, it is possible to generate power pulses at megahertz pulse repetition rates. The presented work is devoted to this mode description.
  • Keywords
    plasma switches; power semiconductor diodes; power semiconductor switches; power supplies to apparatus; pulse generators; pulsed power switches; 100 to 300 ns; drift step recovery diodes; high power pulse generation; high repetition frequency pulse generation; initial opening state; low jitter; megahertz pulse repetition rates; nanosecond pulse power generation; plasma pumping; plasma removing cycles; semiconductor opening switch; solid state nanosecond pulsers; time stability; Frequency; Jitter; Plasma materials processing; Plasma stability; Power generation; Power semiconductor switches; Pulse generation; Semiconductor device manufacture; Semiconductor diodes; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
  • Conference_Location
    Baltimore, MA, USA
  • Print_ISBN
    0-7803-4213-5
  • Type

    conf

  • DOI
    10.1109/PPC.1997.679366
  • Filename
    679366