DocumentCode :
1850749
Title :
High-frequency nonlinear amplifier model for the efficient evaluation of inband distortion under nonlinear load-pull conditions
Author :
Vandersteen, Gerd ; Verbeyst, Frans ; Wambacq, Piet ; Donnay, Stephane
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Heverlee - Belgium
Volume :
40
fYear :
2001
fDate :
Nov. 2001
Firstpage :
1
Lastpage :
5
Abstract :
Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error-rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.
Keywords :
Bit error rate; Distortion measurement; Feedback loop; Impedance measurement; Nonlinear distortion; OFDM modulation; Predictive models; Scattering parameters; Transfer functions; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Fall, 58th
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.2001.327501
Filename :
4120204
Link To Document :
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