Material and device characterization to improve yield and performance

Author

Sung, Changmo

Author_Institution

Dept. of Chem. & Nucl. Eng., Massachusetts Univ., Lowell, MA, USA

fYear

1995

fDate

21-23 Jun 1995

Firstpage

453

Lastpage

454

Abstract

Summary form only given. In this paper, TEM characterization of thin film devices of the electronic materials in addition to thin film diamond is emphasized to solve problems of poor control over interfaces and to understand a complex set of parameters in deposition techniques which have hindered the deposition of device-quality films. Also, strategies of the fast turn-around-time for failure analysis in electronic devices are discussed with respect to efficient sample preparation, non-destructive technique, and advanced TEM analysis for nanostructural characteristics

Keywords

boron compounds; crystal growth; diamond; electron microscopy; nondestructive testing; thin film devices; transmission electron microscopy; BN; C; TEM characterization; advanced TEM analysis; deposition techniques; device characterization; device-quality films; electronic materials; failure analysis; interfaces; nanostructural characteristics; nondestructive technique; sample preparation; thin film devices; thin film diamond; Chemical engineering; Chemical technology; Crystalline materials; Electrons; Optical films; Semiconductor thin films; Spectroscopy; Sputtering; Thermal conductivity; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/95 International. Professional Program Proceedings.

Conference_Location

Boston, MA

Print_ISBN

0-7803-2633-4

Type

conf

DOI

10.1109/ELECTR.1995.471022

Filename

471022