Title :
Characterization of a quarts MEMS tilt sensor with 0.001º precision
Author :
Liang, Jinxing ; Kohsaka, Fusao ; Li, Xuefeng ; Kunitomo, Ken ; Ueda, Toshitsugu
Author_Institution :
Grad. Sch. of IPS, Waseda Univ., Kitakyushu, Japan
Abstract :
This paper presents the performance of recently developed MEMS capacitive tilt sensor. The capacitive sensor, which can be considered as a static accelerometer, is fabricated using bulk micromachining technique on a 100-mum-thick z-cut quartz wafer. High-sensitivity and low-noise are achieved with stable output performance in the range of plusmn1deg. The performance evaluation was performed at the 0.625 V excitation voltage and 9.1 Hz data update rate. The typical sensitivity with good linearity is 403.5 fF/deg, which corresponds to 23.1 pF/g and the typical RMS noise is 74 aF, which corresponds to 25 aF/radic(Hz) (0.9 mug/radic(Hz)) noise floor. High-precision measurement of 0.001deg has been demonstrated.
Keywords :
accelerometers; capacitive sensors; micromachining; micromechanical devices; performance evaluation; quartz; SiO2; bulk micromachining; capacitive sensor; noise floor; performance evaluation; quartz MEMS tilt sensor; static accelerometer; Accelerometers; Capacitance; Capacitive sensors; Electrodes; Gas detectors; Micromechanical devices; Packaging; Resists; Sensor phenomena and characterization; Sputter etching; MEMS; capacitive; quartz; tilt sensor;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285503
