Title :
Bipolar transistor equivalents in CMOS technology
Author :
Kim, Gyudong ; Kim, Min-Kyu ; Kim, Wonchan ; Bouzerdoum, Abdesselam
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
Abstract :
A CMOS circuit element equivalent to a bipolar junction transistor (BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65 GHz in a 0.8 μm CMOS technology and the fabricated prototype has 2.3×10-16 A of IS, 2.4 mA of IKF and 390 V of Early voltage
Keywords :
CMOS integrated circuits; bipolar transistors; equivalent circuits; integrated circuit modelling; semiconductor device models; 0.8 micron; 2.4 mA; 390 V; BJT equivalent circuit; CMOS circuit element; CMOS technology; Early voltage; bipolar junction transistor; ideality factor programming; symmetrical performances; BiCMOS integrated circuits; Bipolar transistor circuits; Bipolar transistors; CMOS technology; Circuit simulation; Diodes; Impedance; MOSFETs; Postal services; Prototypes; Virtual prototyping; Voltage;
Conference_Titel :
Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2972-4
DOI :
10.1109/MWSCAS.1995.504374
