DocumentCode :
1854364
Title :
A general route to Earth abundant element absorber layers for thin film photovoltaics with high yield using molecular precursors and non-toxic solvents
Author :
Ki, Wooseok ; Hillhouse, Hugh W.
Author_Institution :
Dept. of Chem. Eng., Univ. of Washington, Seattle, WA, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Earth abundant absorber materials are the most promising candidates for terawatt-scale thin film photovoltaics due to the robust supply chains for the elements involved. The strongest initial candidate appears to be Cu2ZnSnS4 (CZTS), but there are other potential material systems such as FeS2, CuO, and PbS that are just beginning to be re-examined with solution phase processing. Here we report a new, facile, and scalable chemical route to Earth abundant element thin film solar cells by coating a solution of highly soluble, inexpensive, and commercially available precursors in an environmentally friendly non-toxic solvent to form device quality films. Air-stable CZTS photovoltaic devices with 4.1% total area power conversion efficiency are obtained. We have generalized the chemical route and have used it to also fabricate PbS devices that are 1.5% efficient.
Keywords :
copper compounds; power conversion; semiconductor thin films; solar absorber-convertors; solar cells; thin film devices; zinc compounds; Earth abundant absorber material; Earth abundant element absorber layers; Earth abundant element thin film solar cells; air-stable CZTS photovoltaic device; device quality films; environment friendly nontoxic solvent; highly soluble inexpensive commercially available precursor; molecular precursor; nontoxic solvent; phase processing; potential material system; robust supply chains; scalable chemical route; terawatt-scale thin film photovoltaics; total area power conversion efficiency; Chemicals; Films; Performance evaluation; Photonic band gap; Photovoltaic cells; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6185891
Filename :
6185891
Link To Document :
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