Title :
Challenges for high-density 16Gb ReRAM with 27nm technology
Author :
Sills, Scott ; Yasuda, Shuichiro ; Calderoni, Alessandro ; Cardon, Christopher ; Strand, Jonathan ; Aratani, Katsuhisa ; Ramaswamy, Nirmal
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
Enabling a high-density ReRAM product requires: developing a cell that meets a stringent bit error rate, BER, at low program current, integrating the cell without material damage, and providing a high-drive selector at scaled nodes. We discuss ReRAM performance under these constraints and present a 16Gb, 27nm ReRAM capable of 105 cycles with BER <; 7×10-5.
Keywords :
error statistics; nanotechnology; resistive RAM; BER; ReRAM; bit error rate; size 27 nm; storage capacity 16 Gbit; technology; Bit error rate; Conductivity; Degradation; Performance evaluation; Resistance; Transistors; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223639
