• DocumentCode
    1856953
  • Title

    Investigating thallium-based materials for use in multijunction photovoltaics

  • Author

    Downs, Chandler ; Vandervelde, Thomas E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    The optimum band placement for both multijunction photovoltaics, where layers of semiconductor materials are connected in series, and split junction photovoltaic systems, consisting of a number of physically separated solar cells, are investigated. Possible implementations of these designs are suggested, based on design constraints such as lattice matching, use of possible substrates, and ease of material growth. In order to realize these implementations, Tl-bearing semiconductor materials were required in the structures; this is a class of materials that has not been extensively studied, particularly for use in photovoltaics. Simulations of the most promising structures were performed, with efficiencies promising to outperform current high-efficiency cells.
  • Keywords
    solar cells; thallium; Tl-bearing semiconductor materials; high-efficiency cells; lattice matching; material growth; multijunction photovoltaics; optimum band placement; solar cells; split junction photovoltaic systems; thallium-based materials; Equations; Gallium arsenide; Junctions; Mathematical model; Photonic band gap; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6185994
  • Filename
    6185994