DocumentCode :
1856953
Title :
Investigating thallium-based materials for use in multijunction photovoltaics
Author :
Downs, Chandler ; Vandervelde, Thomas E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
The optimum band placement for both multijunction photovoltaics, where layers of semiconductor materials are connected in series, and split junction photovoltaic systems, consisting of a number of physically separated solar cells, are investigated. Possible implementations of these designs are suggested, based on design constraints such as lattice matching, use of possible substrates, and ease of material growth. In order to realize these implementations, Tl-bearing semiconductor materials were required in the structures; this is a class of materials that has not been extensively studied, particularly for use in photovoltaics. Simulations of the most promising structures were performed, with efficiencies promising to outperform current high-efficiency cells.
Keywords :
solar cells; thallium; Tl-bearing semiconductor materials; high-efficiency cells; lattice matching; material growth; multijunction photovoltaics; optimum band placement; solar cells; split junction photovoltaic systems; thallium-based materials; Equations; Gallium arsenide; Junctions; Mathematical model; Photonic band gap; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6185994
Filename :
6185994
Link To Document :
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