Title :
Investigating thallium-based materials for use in multijunction photovoltaics
Author :
Downs, Chandler ; Vandervelde, Thomas E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
Abstract :
The optimum band placement for both multijunction photovoltaics, where layers of semiconductor materials are connected in series, and split junction photovoltaic systems, consisting of a number of physically separated solar cells, are investigated. Possible implementations of these designs are suggested, based on design constraints such as lattice matching, use of possible substrates, and ease of material growth. In order to realize these implementations, Tl-bearing semiconductor materials were required in the structures; this is a class of materials that has not been extensively studied, particularly for use in photovoltaics. Simulations of the most promising structures were performed, with efficiencies promising to outperform current high-efficiency cells.
Keywords :
solar cells; thallium; Tl-bearing semiconductor materials; high-efficiency cells; lattice matching; material growth; multijunction photovoltaics; optimum band placement; solar cells; split junction photovoltaic systems; thallium-based materials; Equations; Gallium arsenide; Junctions; Mathematical model; Photonic band gap; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185994