Title :
The investigation of current sensitivity of the multielement ultraviolet detector based on GaAs
Author :
Mokeev, D. ; Zarubin, A.
Author_Institution :
Siberian Phys-Tech Instn., Tomsk
Abstract :
The investigation results of multielement ultraviolet detector based on GaAs were demonstrated in the work. Investigated photodetector was compared with silicon photodiode. It was shown the current sensitivity measured at the wave-length 260 nm was 0.08 A/W, that higher by twice than silicon photodiode.
Keywords :
III-V semiconductors; gallium arsenide; photodetectors; ultraviolet detectors; GaAs; current sensitivity; multielement semiconductor detector; multielement ultraviolet detector; photodetector; semiconductor photo elements; Communication system control; Gallium arsenide; Interference; Optical detectors; Optical filters; Optical sensors; Photodetectors; Photodiodes; Silicon; Strips; Current sensitivity; GaAs; UV radiation; multielement photodetector;
Conference_Titel :
Control and Communications, 2009. SIBCON 2009. International Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4244-2007-0
DOI :
10.1109/SIBCON.2009.5044848
