3.5 V operation driver-amplifier MMIC utilizing SrTiO/sub 3/ capacitors for 1.95 GHz wide-band CDMA cellular phones

Author

Nishimura, T.B. ; Iwata, N. ; Yamaguchi, K. ; Takemura, K. ; Miyasaka, Y.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

447

Abstract

This paper describes 1.95 GHz Wide-band Code Division Multiple Access power performance of a two-stage driver amplifier MMIC with 1.0/spl times/1.5 mm/sup 2/ area, in which double-doped AlGaAs/InGaAs/AlGaAs FETs and SrTiO/sub 3/ capacitors are utilized. Operated at 3.5 V with gate bias conditions chosen to reduce distortion, the complete MMIC delivered an adjacent channel leakage power ratio (ACPR) of -47.3 dBc at 5 MHz off-center frequency and an output power (P/sub out/) of 73 mW (18.6 dBm) with a power-added efficiency (PAE) of 11.1% and an associated gain of 23.5 dB. A maximum PAE of 33.2% was obtained with P/sub out/ of 113 mW (20.5 dBm) at ACPR of -42.0 dBc.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; capacitors; cellular radio; code division multiple access; driver circuits; field effect MMIC; gallium arsenide; indium compounds; strontium compounds; telephone sets; wideband amplifiers; 1.95 GHz; 11.1 to 33.2 percent; 23.5 dB; 3.5 V; 73 to 113 mW; AlGaAs-InGaAs-AlGaAs; SrTiO/sub 3/; SrTiO/sub 3/ capacitor; adjacent channel leakage power ratio; double-doped AlGaAs/InGaAs/AlGaAs FET; gain; output power; power-added efficiency; two-stage driver amplifier MMIC; wideband CDMA cellular phone; Broadband amplifiers; Capacitors; Driver circuits; FETs; Frequency; Indium gallium arsenide; MMICs; Multiaccess communication; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705029

Filename

705029