Title :
Detailed comparison of transparent front contacts for thin film silicon solar cells
Author :
Calnan, S. ; Neubert, S. ; Nock, C. ; Gabriel, O. ; Rohde, M. ; Ruske, F. ; Stannowski, B. ; Schlatmann, R.
Author_Institution :
PVcomB/Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
Abstract :
In this contribution we compare the optical, electronic and surface morphological properties of various textured transparent conducting oxides (TCO) based on zinc oxide and fluorine doped tin oxide. Since the TCO material properties tend to be interrelated, comparison of such films is a rather complex exercise. The TCO films were characterised by atomic force microscopy, scanning electron microscopy, spectrophotometry, angle resolved scattering, four point probe and Hall Effect measurements. Thereafter, an attempt was made to correlate the TCO material properties with the corresponding current-voltage characteristics and quantum efficiency in actual solar cells. It was found that the solar cells were more sensitive to changes in the optical properties of the TCO substrates than to those in the sheet resistance. Based on these results, we recommend that when optimising TCO films for thin film silicon production, the first priority should be to obtain the highest transmittance possible and then to tune the electrical properties accordingly.
Keywords :
II-VI semiconductors; atomic force microscopy; fluorine; scanning electron microscopy; semiconductor thin films; silicon; solar cells; spectrophotometry; surface morphology; tin compounds; zinc compounds; Hall effect measurements; SnO:F; ZnO; angle resolved scattering; atomic force microscopy; current voltage characteristics; four point probe; quantum efficiency; scanning electron microscopy; sheet resistance; spectrophotometry; surface morphological properties; thin film silicon solar cells; transparent conducting oxides; transparent front contacts; Films; Glass; Photovoltaic cells; Scattering; Silicon; Substrates; Surface morphology;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186021