Surface photovoltage spectroscopy and photoluminescence study of vertically stacked self-assembled InAs/GaAs quantum dots

Author

Sitarek, P. ; Hsu, H.P. ; Chen, H.S. ; Huang, Y.S. ; Wang, J.S. ; Lai, C.M. ; Wei, L.C. ; Hsiao, R.S. ; Lin, S.Y. ; Chi, J.Y.

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2005

fDate

11-15 July 2005

Firstpage

324

Abstract

We present a study of two 30-layer stacks of self-assembled InAs/GaAs quantum dots with different spacer layer (SL) thickness using surface photovoltage spectroscopy (SPS) and photoluminescence (PL) at room temperature. Both PL and SPS spectra of stacked QDs structure with a thinner spacer layer in comparison to other structures show additional feature. QD features are more clearly visible in SPS spectra and show more features in comparison to PL ones. This study demonstrates the considerable potential of SPS and PL for the contactless and nondestructive characterization of QDs structures at room temperature.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; surface photovoltage; 293 to 298 K; 30-layer stacks; InAs-GaAs; nondestructive characterization; photoluminescence study; quantum dot structure; room temperature; surface photovoltage spectroscopy; vertically stacked self-assembled InAs-GaAs quantum dots; Energy states; Gallium arsenide; Laser sintering; Photoluminescence; Quantum dot lasers; Quantum dots; Spectroscopy; Surface emitting lasers; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500761

Filename

1500761