• DocumentCode
    1858409
  • Title

    Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

  • Author

    Ni, C.-N. ; Li, X. ; Sharma, S. ; Rao, K.V. ; Jin, M. ; Lazik, C. ; Banthia, V. ; Colombeau, B. ; Variam, N. ; Mayur, A. ; Chung, H. ; Hung, R. ; Brand, A.

  • Author_Institution
    Appl. Mater., Santa Clara, CA, USA
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    We report a record setting low NMOS contact Rc of 2e-9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e-9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity with HD Si:P using P implantation followed by laser anneal to reach the contact resistivity requirement for the 10nm or 7 nm nodes.
  • Keywords
    MOSFET; electrical contacts; electrical resistivity; elemental semiconductors; phosphorus; silicon; titanium; Si:P; Ti-Si; all silicon based solution; millisecond laser anneal activation; nMOSFET contact; ultralow contact resistivity; Annealing; Conductivity; High definition video; Implants; Metals; Resistance; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223711
  • Filename
    7223711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858409