Title :
Hopping transport through self-assembled molecules: transport mechanism for conduction-based chemical sensors
Author :
Lee, Kangho ; Fan, Wendy ; Meyyappan, Meyya ; Janes, David B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We have fabricated a testbed for hopping transport through a self-assembled monolayer (SAM), using a back-to-back Schottky barrier structure on semi-insulating GaAs, and various molecules were self-assembled on the testbed. The leakage current of the testbed is less than 1 nA. However, it was found that some of deposited molecules induce significant increase in conductivity, compared to predeposition current. There exist two possible conduction paths that might cause this phenomenon: 1) hopping conduction through SAM 2) surface potential change due to SAM. To verify that the hopping transport is a dominant conduction mechanism, I-V characteristics of thiophenol and octadecanethiol have been compared to investigate the effects of molecular dipole moment and π-electrons on conductivity enhancement. In addition, the application of the testbed to a chemical sensor has been demonstrated by depositing redox molecules on the testbed.
Keywords :
III-V semiconductors; Schottky barriers; chemical sensors; gallium arsenide; hopping conduction; leakage currents; monolayers; self-assembly; surface potential; GaAs; I-V characteristics; Schottky barrier structure; chemical sensor; conduction mechanism; conduction paths; conduction-based chemical sensors; conductivity; hopping conduction; hopping transport; leakage current; molecular dipole moment; octadecanethiol; predeposition current; redox molecules; self-assembled molecules; self-assembled monolayer; semi-insulating GaAs; surface potential change; testbed; thiophenol; transport mechanism; Automatic testing; Chemical sensors; Conductivity; Crystals; Gallium arsenide; Gold; Nanotechnology; Schottky barriers; Self-assembly; Solids;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500811