DocumentCode :
1859154
Title :
A drift-diffusion subband model for the double-gate MOSFET
Author :
Abdallah, N. Ben ; Méhats, F. ; Pietra, P. ; Vauchelet, N.
Author_Institution :
Mathematiques pour l´´Industrie et la Physique, Univ. Paul Sabatier, Toulouse, France
fYear :
2005
fDate :
11-15 July 2005
Firstpage :
519
Abstract :
A self-consistent model for charged particles, accounting for quantum confinement, diffusive transport and electrostatic interaction is considered. In this coupled quantum-classical system, the coupling occurs in the momentum variable: the electrons are like point particles in the direction parallel to the gas (classical transport) while they behave like waves in the transversal direction (quantum description). Numerical implementation of this model provides a simulation of the transport of charge carriers in a quasi bidimensional electron gas confined in a nanostructure.
Keywords :
MOSFET; nanotechnology; semiconductor device models; charged particles; classical transport; coupled quantum-classical system; diffusive transport; double-gate MOSFET; drift-diffusion subband model; electrostatic interaction; momentum variable; nanostructure; quantum confinement; quantum description; quasi bidimensional electron gas; self-consistent model; Charge carriers; Electrons; Electrostatics; MOSFET circuits; Plasma temperature; Poisson equations; Statistics; Telephony; Temperature distribution; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
Type :
conf
DOI :
10.1109/NANO.2005.1500815
Filename :
1500815
Link To Document :
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