DocumentCode :
1859741
Title :
Growth of SiO2 nanowires in presence of CuO/carbon mixed powders
Author :
Lin, Yu-Chiao ; Lin, Wen-Tai
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2005
fDate :
11-15 July 2005
Firstpage :
589
Abstract :
The effects of carbothermal reduction of CuO powders on the growth of SiO2 nanowires (SiONWs) on Si without the catalyst were studied. SiONWs were grown as functions of the Ar flow rate and carbon concentration in the CuO/carbon mixed powders. SiONWs could be grown at a temperature as low as 1000°C. The minimum Ar flow rate required for growth of SiONWs was about 10 sccm. Large quantity of SiONWs was not grown without using CuO/carbon powders, indicating that the formation of CO/CO2 gases by heating CuO/carbon mixed powders plays an important role in growth of SiONWs. Higher carbon concentration in the mixed powders enhanced the formation of SiC. The nucleation and growth of SiONWs were found to appear mainly in the cracks of Si, which were formed due to vaporization of SiO. The photoluminescence spectra of SiONWs showed a strong blue-green emission.
Keywords :
carbon; chemical analysis; copper compounds; cracks; heat treatment; nanotechnology; nanowires; nucleation; photoluminescence; powders; reduction (chemical); silicon compounds; vaporisation; 1000 degC; CuO-C; CuO/carbon mixed powders; SiO2; SiO2 nanowires; blue-green emission; carbon concentration; carbothermal reduction; catalyst; cracks; flow rate; heating; nucleation; photoluminescence spectra; vaporization; Argon; Boats; Copper; Nanowires; Optical devices; Optical microscopy; Photoluminescence; Powders; Scanning electron microscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
Type :
conf
DOI :
10.1109/NANO.2005.1500840
Filename :
1500840
Link To Document :
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