DocumentCode :
1860645
Title :
Temperature dependence of NBTI induced delay
Author :
Khan, Seyab ; Hamdioui, Said
Author_Institution :
Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
fYear :
2010
fDate :
5-7 July 2010
Firstpage :
15
Lastpage :
20
Abstract :
Negative Bias Temperature Instability (NBTI) has become a major reliability concern for nanoscaled PMOS transistors. NBTI is a thermally activated process and its aftereffects (e.g. threshold voltage shift, current degradation and delay increment) increase exponentially with the rise in temperature. This paper presents a model of temperature impact on NBTI induced delay for PMOS transistor. It demonstrates the model on 90nm, 65nm and 45nm Predictive Technology Model (PTM) designs operating at temperature range 25-125°C. The results show a strong correlation of NBTI induced delay with threshold voltage shift and holes mobility degradation. The key insights observed are: (a) NBTI induced threshold voltage shift is temperature sensitive and increases up to 42% at high temperatures, (b) NBTI degrades holes mobility in PMOS inversion layer and the degradation reaches 8% in 45nm technology and (c) The impact of NBTI on PMOS transistor delay becomes significant at high temperature and increases by approximately 2.5% in each successive technology reaching 11.5% in 45nm technology.
Keywords :
MOSFET; semiconductor device reliability; PMOS inversion layer; current degradation; delay increment; holes mobility; nanoscaled PMOS transistors; negative bias temperature instability induced delay; predictive technology model designs; size 45 nm; size 65 nm; size 90 nm; temperature 25 degC to 125 degC; temperature dependence; threshold voltage shift; Degradation; Delay; MOSFETs; Stress; Temperature dependence; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
On-Line Testing Symposium (IOLTS), 2010 IEEE 16th International
Conference_Location :
Corfu
Print_ISBN :
978-1-4244-7724-1
Type :
conf
DOI :
10.1109/IOLTS.2010.5560238
Filename :
5560238
Link To Document :
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