Title :
Investigation of power and linearity performance for low- and high-voltage SiGe HBTs
Author :
Dinh, Thanh Vinh ; Pijper, R. ; Vanhoucke, T. ; Gridelet, E. ; Klaassen, D.B.M.
Author_Institution :
NXP Semicond. Res., Leuven, Belgium
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.
Keywords :
avalanche breakdown; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; HBT linearity; HBT power; Kirk effect; RF power amplifier; SiGe; avalanche effect; heterojunction bipolar transistors; on wafer measurements; Harmonic analysis; Linearity; Power measurement; Power system harmonics; Radio frequency; Silicon germanium; Transient analysis; Low voltage; SiGe HBTs; breakdown; cut-off frequency; high voltage; large signal; linearity; power; small signal;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798132
