DocumentCode :
1861843
Title :
Performance improvement of CIGS solar cells with CBD-ZnS buffer layers by light soaking and rapid thermal annealing
Author :
Chien, Chih-Yu ; Chen, Chia-Hsiang ; Tsai, Chih-Pin ; Shieh, Jia-Min ; Hsiao, Yu-Jen ; Lai, Chih-Huang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Cadmium-free Cu(In, Ga)Se2 (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of current-voltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases VOC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance.
Keywords :
buffer layers; copper compounds; gallium compounds; rapid thermal annealing; solar cells; sputter deposition; zinc compounds; CBD buffer layers; CIGS solar cells; CuGaSe2; CuInSe2; DC sputtering deposition; J-V performance; RF sputtering deposition; RTA treatment; ZnS; chemical bath deposition; current-voltage performance; light soaking; rapid thermal annealing; Buffer layers; Frequency measurement; Performance evaluation; Photovoltaic cells; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186185
Filename :
6186185
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1861843
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