Title :
OxID: On-chip one-time random ID generation using oxide breakdown
Author :
Liu, Nurrachman ; Hanson, Scott ; Sylvester, Dennis ; Blaauw, David
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A new chip ID generation method is presented that leverages the random and permanent characteristics of oxide breakdown. A 128b ID array is implemented in 65nm CMOS and two algorithms for stressing the oxides are presented, showing a near-ideal Hamming distance of 63.92 in silicon measurements and consistent IDs across voltage and temperature.
Keywords :
microprocessor chips; ID array; OxID; chip ID generation method; near-ideal Hamming distance; on-chip one-time random ID generation; oxide breakdown; Electric breakdown; Hamming distance; Power measurement; Stress; Temperature measurement; Transistors; Voltage measurement;
Conference_Titel :
VLSI Circuits (VLSIC), 2010 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5454-9
DOI :
10.1109/VLSIC.2010.5560287
