Title :
Geometry scalable model parameter extraction for mm-wave SiGe-heterojunction transistors
Author :
Pawlak, Andreas ; Schroter, Michael ; Fox, A.
Author_Institution :
Tech. Univ. Dresden, Dresden, Germany
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
The observation of negative perimeter collector current in advanced SiGe HBT technologies is explained and a general geometry scaling approach is proposed. Application to mm-wave SiGe-HBTs shows excellent results of HICUM/L2 v2.31 for a wide range of emitter dimensions. Non-monotonic variation of peak fT with emitter dimensions demonstrates the relevance of a geometry scalable compact model for circuit optimization.
Keywords :
Ge-Si alloys; circuit optimisation; heterojunction bipolar transistors; millimetre wave bipolar transistors; HBT technologies; HICUM/L2 v2.31; SiGe; circuit optimization; emitter dimensions; geometry scalable model; mm-wave heterojunction transistors; negative perimeter collector current; nonmonotonic variation; parameter extraction; Capacitance; Geometry; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; HICUM/L2; SiGe-HBTs; geometry scalable model; mm-wave; parameter extraction;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798160
