Title :
GaN for automotive applications
Author :
Nishikawa, Kiisa
Author_Institution :
Toyota Central R&D Labs., Nagakute, Japan
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than that of Si power devices, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Power modules used in HV/EV system and present status of the GaN power device development are presented. Reliability of the GaN power device was also discussed.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; hybrid electric vehicles; power semiconductor devices; semiconductor device reliability; silicon; wide band gap semiconductors; GaN; Si; automotive; electric vehicle; hybrid vehicle; power device reliability; power devices; power modules; power switching devices; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Multichip modules; Silicon; Substrates; AlGaN/GaN; EV; HV; current collapse; gate insulator; lateral device; power device; vertical device;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798163
