DocumentCode
1862672
Title
Comparative study of HBT ageing in a complementary SiGe:C BiCMOS technology
Author
Fischer, G.G. ; Molina, Juan ; Tillack, Bernd
Author_Institution
IHP, Frankfurt (Oder), Germany
fYear
2013
fDate
Sept. 30 2013-Oct. 3 2013
Firstpage
167
Lastpage
170
Abstract
Both npn- and pnp-SiGe HBT types of a complementary BiCMOS technology were consistently studied under mixed-mode and reverse stress conditions to check for any ageing mismatches. These were found to be more pronounced under forward than under reverse stress. Long-term stress-tests revealed a not yet described base current degradation “catching-up” under low current stress conditions. The resulting ageing parameters were put together into an ageing function for incorporation into HBT compact models.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; ageing; heterojunction bipolar transistors; semiconductor materials; stress analysis; HBT ageing; HBT compact models; SiGe:C; ageing function; complementary BiCMOS technology; long-term stress-tests; mixed-mode stress conditions; reverse stress conditions; Degradation; Heterojunction bipolar transistors; Heterojunctions; Reliability; Stress; CBiCMOS; HBT reliability; Heterojunction bipolar transistors; bipolar modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location
Bordeaux
ISSN
1088-9299
Print_ISBN
978-1-4799-0126-5
Type
conf
DOI
10.1109/BCTM.2013.6798167
Filename
6798167
Link To Document