DocumentCode :
1862934
Title :
Improvement of hydrogen passivation via the template of acid textured surface
Author :
Huang, C.C. ; Chen, W.H. ; Lin, J.Y.
Author_Institution :
Motech Ind. Inc., Tainan, Taiwan
fYear :
2011
fDate :
19-24 June 2011
Abstract :
In solar cell manufacturing, surface texturing plays an important role in light trapping. Besides optical performance, it was revealed to be also critical to passivation performance of solar cells in this study. Among wafers textured with different chemicals (HNO3, KOH and KOH with IPA) and deposited with PECVD SiNx:H films, the acid HNO3 textured wafers showed the highest bulk lifetime, while the alkaline KOH textured ones showed the lowest surface recombination velocity (SRV). With the advantage of bulk lifetime improvement from acid textured surface, an additional passivation process via the template of acid textured surface prior to KOH or KOH+IPA texturing was testified to be able to enhance bulk lifetime and reduce SRV of wafers. Besides bulk lifetime and SRV, the density of interface trap (Dit) also shows the same correlation with the passivation performance mentioned above, as revealed by CV measurement in this study.
Keywords :
interface states; passivation; plasma CVD; silicon compounds; solar cells; surface recombination; surface texture; PECVD films; SiN:H; acid textured surface; bulk lifetime; hydrogen passivation; interface trap; light trapping; optical performance; passivation performance; passivation process; solar cell manufacturing; surface recombination velocity; surface texturing; Chemicals; Etching; Films; Passivation; Silicon; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186231
Filename :
6186231
Link To Document :
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