Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

Author

Chandola, A. ; Ko, Youngok ; Dutta, P.S. ; Zakel, Andrew ; Gonzales, Luel ; Hall, Arlynn ; Henry, Jean ; Gillen, G.D. ; Guha, Shekhar

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

61

Lastpage

65

Abstract

Vertical Bridgman grown bulk crystals of antimonides (e.g. InSb, GaSb and InGaSb) doped with isoelectronic dopants exhibited significant reduction in free-carrier absorption. The enhancement in below band gap optical transmission and reduction in residual doping concentration are attributed to reduction or compensation of native defects.

Keywords

III-V semiconductors; antisite defects; crystal growth from melt; gallium compounds; indium compounds; light transmission; narrow band gap semiconductors; semiconductor doping; transparency; vacancies (crystal); GaSb; InGaSb; InSb; electrical properties; free-carrier absorption; isoelectronic dopants; low bandgap III-V antimonides; native defects; optical properties; optical transmission; residual doping concentration; vertical Bridgman growth; Absorption; Conducting materials; Crystals; Doping; High speed optical techniques; III-V semiconductor materials; Optical materials; Optical mixing; Photonic band gap; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354432

Filename

1354432