DocumentCode :
1862984
Title :
Predicting large-signal CML gate delay using Y-Parameters for fast process optimization
Author :
Shankar, Subramaniam ; van Noort, Wibo ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA
fYear :
2013
fDate :
Sept. 30 2013-Oct. 3 2013
Firstpage :
207
Lastpage :
210
Abstract :
A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.
Keywords :
Ge-Si alloys; current-mode logic; logic gates; FoM; Y-parameters; collector current; current-mode logic gate delay; differential-mode half circuit; emitter-coupled differential pair; figure-of-merit; load resistor combinations; power-delay curve; process optimization; prototype technology platform; resistive load; ring oscillator gate delays; small-signal S-parameter simulations/measurements; small-signal building block; small-signal model parameter based equation; Delays; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
ISSN :
1088-9299
Print_ISBN :
978-1-4799-0126-5
Type :
conf
DOI :
10.1109/BCTM.2013.6798177
Filename :
6798177
Link To Document :
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