DocumentCode
1863244
Title
Analytical charge conservative large signal model for MODFETs validated up to MM-wave range
Author
Osorio, R. ; Berroth, M. ; Marsetz, W. ; Verweyen, L. ; Demmler, M. ; Massler, H. ; Neumann, M. ; Schlechtweg, M.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
595
Abstract
We present an analytical charge conservative large signal model for MODFETs, which is valid up to MM-wave frequencies. Although the model equations are simple, an excellent accuracy in the representation of the nonlinear elements of the FET is achieved. The model was used for the successful design of a 2-stage power amplifier for 60 GHz.
Keywords
high electron mobility transistors; 60 GHz; HEMT; MM-wave range; MODFETs; analytical large signal model; charge conservative model; model equations; nonlinear elements; Current measurement; Diodes; Frequency; HEMTs; MODFETs; Nonlinear equations; Power amplifiers; Scattering parameters; Signal analysis; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705063
Filename
705063
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