DocumentCode
1863455
Title
Quantum dots infrared photodetectors
Author
Ye, Zhengmao ; Campbell, Joe C. ; Chen, Zhonghui ; Kim, Eui-Tae ; Madhukar, Anupam
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
185
Lastpage
192
Abstract
We report a series of InAs quantum dots infrared photodetectors. By using InGaAs cap layers and InAIGaAs lateral potential confinement layers, the peak absorption can be manipulated in from ∼5.6 μm to ∼9 μm.
Keywords
III-V semiconductors; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 5.6 to 9 micron; InAlGaAs; InAs; InGaAs; absorption; cap layers; infrared photodetectors; lateral potential confinement layers; quantum dots; Gallium arsenide; Indium; Infrared detectors; Microelectronics; Molecular beam epitaxial growth; Photodetectors; Photoluminescence; Quantum dots; Stress; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN
0-7803-8614-0
Type
conf
DOI
10.1109/ISCSPC.2003.1354452
Filename
1354452
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