Title :
Breakdown effects on the performance and reliability of power MESFETs
Author :
Shirokov, M.S. ; Leoni, R.E. ; Wei, C.J. ; Hwang, J.C.M.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; power MESFET; semiconductor device models; semiconductor device reliability; GaAs; III-V semiconductors; RF breakdown effects; drive conditions; efficiency; large-signal MESFET model; linearity; match conditions; optimum bias; output power; power MESFETs; reliability; waveform measurements; Breakdown voltage; Current measurement; Electric breakdown; Gain; Gallium arsenide; MESFETs; Power generation; Power measurement; Predictive models; Radio frequency;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567631
