DocumentCode
1863546
Title
Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects
Author
Ouarch, Z. ; Collantes, J.M. ; Teyssier, J.P. ; Quere, R.
Author_Institution
IRCOM, Limoges Univ., France
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
599
Abstract
This paper presents MESFET measurement methods based on pulsed measurements that separate trapping and thermal effects. Derived from these measurements, a model of the trapping effect is determined, as well as a thermal model. The proposed nonlinear model is validated from DC to RF frequencies, it handles dynamical dispersive effects and does not depend on the hot bias point.
Keywords
gallium arsenide; GaAs; GaAs FET; MESFET measurement methods; dynamical dispersive effects; dynamical trapping effects; measurement based nonlinear modeling; nonlinear electrothermal modeling; pulsed measurements; thermal effects; thermal model; Electron traps; Electrothermal effects; FETs; Gallium arsenide; Isothermal processes; MESFETs; Performance evaluation; Pulse measurements; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705064
Filename
705064
Link To Document