Title :
Off-state breakdown walkout in high-power PHEMT´s
Author :
Chou, Y.C. ; Li, G.P. ; Yu, K.K. ; Wu, C.S. ; Chu, P. ; Hou, L.D. ; Midford, T.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Abstract :
PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT´s process for reliability and to improve the breakdown voltage.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; passivation; plasma CVD; power HEMT; semiconductor device reliability; semiconductor device testing; 240 degC; 400 h; AlGaAs-InGaAs; III-V semiconductors; PECVD; annealing; breakdown voltage; high-power PHEMT; nitride passivation; off-state breakdown walkout; reliability; starting wafers; surface process condition; Aircraft propulsion; Annealing; Degradation; Doping; Electric breakdown; Gallium arsenide; Indium gallium arsenide; PHEMTs; Passivation; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567633
