Hot carrier reliability in high-power PHEMTs

Author

Chou, Y.C. ; Li, G.P. ; Yu, K.K. ; Chu, P. ; Hou, L.D. ; Wu, C.S. ; Midford, T.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

46

Lastpage

49

Abstract

PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT´s and recommends an alternative to improve the hot carrier reliability.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; indium compounds; passivation; plasma CVD; power HEMT; semiconductor device reliability; semiconductor device testing; AlGaAs-InGaAs; PECVD; Schottky diode degradation; barrier height increase; device degradation characteristics; double gate recess; drain engineering; high-power PHEMT; hot carrier reliability; hot carrier stress; nitride deposition processes; nitride passivation; nitride quality; Aerospace materials; Aircraft propulsion; Degradation; Electric breakdown; Gallium arsenide; Hot carrier effects; Hot carriers; Intrusion detection; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567634

Filename

567634