Title :
A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance
Author :
Sang-Woong Yoon ; Chang-Ho Lee ; Min-Gun Kim ; Chung-Hwan Kim ; Jaejin Lee ; Laskar, J. ; Songcheol Hong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
We present a fully integrated 6.7 GHz push-push oscillator MMIC using a cross-coupled differential topology with a capacitive coupling feedback in a commercial GaAs MESFET process. The push-push oscillator shows phase noise of -118.83 dBc/Hz at an offset frequency of 600 kHz with a 3.3 V supply voltage. This low phase-noise performance is comparable to, or better than, the best reported results of 5/spl sim/6 GHz-band oscillators implemented in CMOS and SiGe HBT processes. A 6.4 GHz fundamental oscillator MMIC using the cross-coupled differential topology was also fabricated. The measured phase-noise of the fundamental oscillator is -108 dBc/Hz at an offset frequency of 600 kHz. In addition to the low phase-noise, the push-push oscillator in this paper occupies a compact area of 480/spl times/500 /spl mu/m/sup 2/. To our knowledge, it is the first implementation of a GaAs MESFET-based push-push oscillator MMIC using the cross-coupled differential topology with capacitive coupling feedback. This work is also the first report that shows the low phase-noise performance of the push-push oscillator using the differential topology as compared with that of the fundamental oscillator.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC oscillators; feedback oscillators; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit noise; phase noise; 3.3 V; 480 micron; 500 micron; 6.4 GHz; 6.7 GHz; GaAs MESFET process; capacitive coupling feedback; cross-coupled differential topology; fundamental oscillator MMIC; low phase-noise performance; push-push oscillator MMIC; CMOS process; Feedback; Frequency; Gallium arsenide; MESFETs; MMICs; Phase noise; Silicon germanium; Topology; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964342