Title :
An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology
Author :
Xian-Jie Li ; Jin-Ping Ao ; Rong Wang ; Wei-Ji Liu ; Zhi-Gong Wang ; Qing-Ming Zeng ; Shi-Yong liu ; Chun-Guang Liang
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance amplifier with a 50 ohm-matched differential output. The MSM PD on the chip shows a dark current of 2.0 nA as well as a responsivity of 0.30 A/W under a bias of 3.5 V. The TIA shows a transimpedance gain of more than 58 dB/spl Omega/ with a -3 dB bandwidth of 2.0 GHz. Opening eye diagrams are demonstrated at bit-rates of 1.25 Gbit/s and 2.5 Gbit/s under a +5 V supply.
Keywords :
HEMT integrated circuits; amplifiers; dark conductivity; electric current; gallium arsenide; integrated circuit design; integrated circuit measurement; metal-semiconductor-metal structures; optical receivers; photodetectors; 0.8 micron; 1.25 Gbit/s; 2 GHz; 2 nA; 2.5 Gbit/s; 3.5 V; 5 V; 50 ohm; 850 nm; GaAs; GaAs PHEMT technology; MSM PD; MSM photodetector; dark current; depleted GaAs PHEMT technology; impedance-matched differential output; monolithic integrated photoreceiver; opening eye diagrams; responsivity; single-power-supplied transimpedance amplifier; transimpedance amplifier; transimpedance gain; Buffer layers; Gallium arsenide; Optical amplifiers; Optical interconnections; PHEMTs; Photodetectors; Radiofrequency amplifiers; Semiconductor optical amplifiers; Substrates; Superlattices;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964348
