Title :
1-W 1:16 DEMUX and one-chip CDR with 1:4 DEMUX for 10 Gbit/s optical communication systems
Author :
Ishii, K. ; Nosaka, H. ; Nakajima, H. ; Kurishima, K. ; Ida, M. ; Watanabe, N. ; Yamane, Y. ; Sano, E. ; Enoki, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
Using InP/InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX) IC and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10 Gbit/s optical communication systems. The HBTs were fabricated by a non-self-aligned process to achieve high productivity and uniformity of device characteristics. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gbit/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP/InGaAs HBTs for low-power, high-integration optical communication ICs.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; optical communication equipment; synchronisation; 1 W; 10 Gbit/s; 950 mW; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor technology; demultiplexer; low-power IC; nonself-aligned process; one-chip clock and data recovery; optical communication system; Bipolar integrated circuits; Clocks; Error-free operation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical design; Optical fiber communication; Photonic integrated circuits; Productivity;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964356