A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM

Author

Berdan, Radu ; Chuan Lim ; Khiat, Ali ; Papavassiliou, Christos ; Prodromakis, Themistoklis

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

135

Lastpage

137

Abstract

Realizing large-scale circuits utilizing emerging nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wide range of biasing conditions. Currently, no available SPICE memristor model accounts for both nonvolatile and volatile resistive switching characteristics, the coexistence of which has been recently demonstrated to manifest on practical ReRAM. In this letter, we present a new memristor SPICE model that introduces volatile effects, which can render a rate-dependent bipolar nonvolatile switching operation. The model is demonstrated via a number of simulation cases and is benchmarked against measured results acquired by solid-state TiO₂ ReRAM.

Keywords

SPICE; integrated circuit modelling; memristors; nanoelectronics; random-access storage; SPICE memristor model; biasing conditions; large-scale circuits; nanoionic devices; nonvolatile resistive switching characteristics; rate-dependent bipolar nonvolatile switching operation; solid-state TiO₂ ReRAM; volatile resistive switching characteristics; Integrated circuit modeling; Memristors; Nanoscale devices; Resistance; SPICE; Switches; Timing; ${rm TiO}_{2}$; Memristor; ReRAM; SPICE; memristive devices; model; non-volatile; volatility;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2291158

Filename

6680642