Title :
Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz
Author :
Lee, S. ; Kim, H.J. ; Urteaga, M. ; Krishnan, S. ; Wei, Y. ; Dahstrom, M. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; 141 GHz; 425 GHz; 8 V; DC current gain; InP-InGaAs-InP; InP/InGaAs/InP DHBT; breakdown voltage; current gain cut-off frequency; power gain cut-off frequency; transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors; transferred-substrate technology; Bandwidth; DH-HEMTs; Double heterojunction bipolar transistors; Electromagnetic heating; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Substrates; Wet etching;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964374
