DocumentCode :
1865154
Title :
Prediction of strength and fatigue lifetime of MEMS structures with arbitrary shapes
Author :
Kawai, T. ; Gaspar, J. ; Paul, O. ; Kamiya, S.
Author_Institution :
Nagoya Inst. Technol., Nagoya, Japan
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1067
Lastpage :
1070
Abstract :
Strength and fatigue lifetime of polycrystalline silicon thin films with notches were successfully predicted from the information obtained from reference specimens with uniform stress distribution. The initial damage, which was induced by patterning process and supposed to be independent of specimen shapes, was characterized as an equivalent crack distribution from the strength distribution of reference specimens. Static strength of notched specimens was then estimated from a statistical point of view with stress distribution taken into account. Fatigue lifetime was estimated on the basis of fatigue crack extension process described by Paris´ law, with the two parameters obtained from uniform stress specimens in the previous study as material inherent constants.
Keywords :
elemental semiconductors; fatigue cracks; micromechanical devices; notch strength; reliability; semiconductor thin films; silicon; statistical distributions; stress effects; MEMS structures; Paris law; Si; arbitrary shapes; equivalent crack distribution; fatigue crack extension process; fatigue lifetime; notched specimens; patterning process; polycrystalline silicon thin films; reliability; static strength; statistical distribution; uniform stress distribution; Etching; Fatigue; Life estimation; Lifetime estimation; Micromechanical devices; Shape; Silicon; Springs; Stress; Testing; Crack extension; Design for reliability; Fatigue; Paris´ law; Polysilicon; Strength; Weibull distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285943
Filename :
5285943
Link To Document :
بازگشت