Title :
Study of the ion-implanted back-surface fields in front-contact front-junction solar cells
Author :
Kim, Deok-kee ; Choi, Youngmoon ; Do, Eun Cheol ; Mun, Jinsoo ; Lee, Jin Wook ; Baik, Ihngee ; Kim, Dongkyun ; Kim, Yun Gi
Author_Institution :
Energy Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
We have studied low energy ion-implanted P+ and N+ back surface field (BSF) layers with shallow junctions in front-contact front-junction solar cells for the first time as far as we know. With N+ BSF layer, Voc and the efficiency of the solar cells increased on average by 30 mV and 1.3%, respectively. N+ BSF layer reduced recombination at the back surface significantly while P+ layer increased it. The higher Voc due to the reduced recombination for the N+ BSF and the lower Voc due to the increased recombination for the P+ BSF were attributed to the asymmetry in the capture cross-sections of the minority carriers (σn ~ 100*σp).
Keywords :
ion implantation; solar cells; front-contact front-junction solar cells; ion-implanted back-surface fields; low-energy ion-implanted BSF layers; recombination reduction; solar cell efficiency; Charge carrier processes; Doping; Photovoltaic cells; Radiative recombination; Silicon; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186331