Thermal impact of InGaAs on InP based HBTs

Author

Ray, M. ; Hill, D. ; Hartin, O. ; Johnson, K. ; Li, P.

Author_Institution

Motorola DigitaIDNA Lab., Tempe, AZ, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

261

Lastpage

264

Abstract

Thermal characteristics of typical InP/InGaAs and InGaP/GaAs HBTs were compared by simulation. Parameters such as emitter dimensions, number of emitters, emitter pitch, and thickness of device layers were varied over ranges of interest. Despite the higher thermal conductivity of the InP substrate compared to GaAs, thermal resistance of InP/InGaAs HBTs was generally higher than that of comparable InGaP/GaAs HBTs because of the very low thermal conductivity of InGaAs. Approaches for minimizing this adverse effect are discussed.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal conductivity; thermal resistance; GaAs substrate; InGaP-GaAs; InGaP/GaAs HBT; InP substrate; InP-InGaAs; InP/InGaAs HBT; thermal conductivity; thermal resistance; thermal simulation; Computational modeling; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Packaging; Power amplifiers; Power dissipation; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964390

Filename

964390