Title :
Thermal impact of InGaAs on InP based HBTs
Author :
Ray, M. ; Hill, D. ; Hartin, O. ; Johnson, K. ; Li, P.
Author_Institution :
Motorola DigitaIDNA Lab., Tempe, AZ, USA
Abstract :
Thermal characteristics of typical InP/InGaAs and InGaP/GaAs HBTs were compared by simulation. Parameters such as emitter dimensions, number of emitters, emitter pitch, and thickness of device layers were varied over ranges of interest. Despite the higher thermal conductivity of the InP substrate compared to GaAs, thermal resistance of InP/InGaAs HBTs was generally higher than that of comparable InGaP/GaAs HBTs because of the very low thermal conductivity of InGaAs. Approaches for minimizing this adverse effect are discussed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal conductivity; thermal resistance; GaAs substrate; InGaP-GaAs; InGaP/GaAs HBT; InP substrate; InP-InGaAs; InP/InGaAs HBT; thermal conductivity; thermal resistance; thermal simulation; Computational modeling; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Packaging; Power amplifiers; Power dissipation; Thermal conductivity; Thermal resistance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964390
