Title :
Ultra high speed direct digital synthesizer using InP DHBT technology
Author :
Gutierrez-Aitken, A. ; Matsui, J. ; Kaneshiro, E. ; Oyama, B. ; Sawdai, D. ; Oki, A. ; Streit, D.
Author_Institution :
TRW Space & Electron. Group, Redondo Beach, CA, USA
Abstract :
Direct Digital Synthesizers (DDS) offer advantages such as precise beam shaping and forming over conventional RF approaches. This paper discusses novel design and process techniques that enable direct digital synthesis of S-band output frequencies using our current InP double-heterojunction bipolar transistor (DHBT) technology with a cantilevered base layer and undercut collector. The test results demonstrate a DDS chip operating at the world record clock rate of 9.2 GHz. Further design and process improvements will be implemented in future generation circuits that will enable synthesis of Ku-band frequencies.
Keywords :
III-V semiconductors; direct digital synthesis; heterojunction bipolar transistors; indium compounds; 9.2 GHz; InP; InP double heterojunction bipolar transistor; RF technology; S-band; beam forming; beam shaping; cantilevered base layer; ultra-high-speed direct digital synthesizer; undercut collector; Bandwidth; Circuit synthesis; Clocks; DH-HEMTs; Frequency synthesizers; Indium phosphide; Linearity; Process design; Radio frequency; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964391
