Simulations of indium arsenide antimonide (InAs0.91Sb0.09) monovalent barrier-based thermophotovoltaic cells

Thermophotovoltaics (TPVs) have attracted interest due to their ability to harvest infrared radiation and produce usable energy. The focus of this research is the characterization of novel TPV cell designs which employ a barrier layer in the pn junction, creating a p-B-n (p-type, barrier, n-type) structure. First suggested for use with photodetectors, the monovalent barrier is designed to block only one carrier; it exists in either the valence band or conduction band but not both. This monovalent band is accomplished by careful selection of a wide bandgap material in place of, or in addition to, the intrinsic layer. The use of a barrier layer enables these p-B-n cells to operate at longer wavelengths, higher efficiencies, and higher operating temperatures. p-B-n designs utilizing InAs_0.91Sb_0.09 lattice matched to GaSb were examined. Barrier and absorber materials were researched and simulations were performed to determine optimal band alignments as well as to perform an initial optimization of the design.