Title :
Design and optimization of a W-band extended interaction klystron amplifier
Author :
Zaojin Zeng ; Zhou Lin ; Li Wenjun ; Chen Hongbin
Author_Institution :
Inst. of Appl. Electron., China Acad. of Eng. Phys., Mianyang, China
Abstract :
A three dimension high frequency circuit of an W band extended interaction klystron amplifier (EIA) is designed. With an electron beam of 17 kV and 0.34 A, and an input microwave power of 30 mW at 94.77 GHz, an average power of 580 W with power conversion efficiency of 10.03% , gain of 42.6 dB, 3dB Instantaneous bandwidth of more than 150 MHz is obtained. However, a peak output power of 50 mW is obtained by experiment. Based on the experiment result, optical system and RF circuit are optimized. Via optimization, a beam transmission of 100% is achieved, and with an electron beam of 18 kV and 0.28 A, and an input microwave power of 30 mW at 94.95 GHz, an average power of 374 W is obtained.
Keywords :
electron beams; klystrons; millimetre wave amplifiers; RF circuit; W-band EIA; W-band extended interaction klystron amplifier; current 0.28 A; current 0.34 A; efficiency 10.03 percent; frequency 94.77 GHz; frequency 94.95 GHz; gain 42.6 dB; instantaneous bandwidth; microwave power; optical system; power 30 mW; power 374 W; power 50 mW; power 580 W; power conversion efficiency; three dimension high frequency circuit electron beam; voltage 17 kV; voltage 18 kV; Cavity resonators; Electron optics; Integrated optics; Klystrons; Microwave circuits; Optimization; Power generation; PIC simulation; W-band; extended interaction klystron; high frequency circuit; optical system;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7224048
