Title :
A family of InGaAs/AlGaAs V-band monolithic HEMT LNAs
Author :
Aust, M. ; Yonaki, J. ; Nakano, K. ; Berenz, J. ; Dow, G.S. ; Liu, L.C.T.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
Five different types of high-electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) utilizing AlGaAs/GaAs and pseudomorphic InGaAs/GaAs materials have been designed for 60-GHz military electronic warfare and communication applications and have demonstrated excellent performance. The best noise figure achieved, was 4.5 dB NF with an associated 4.5-dB gain at 60 GHz for a one-stage 60-GHz MMIC (monolithic microwave integrated circuit) LNA. Also, two- and three stage MMIC LNAs with higher gains were fabricated with noise figures of 5.0 and 5.3 dB, with gains of 11 and 15 dB, respectively, at 60 GHz. The highest gain achieved in V-band was over 20 dB for a three-stage version exhibiting noise figures close to 5 dB for an AlGaAs version. Both bandpass and quasi-low-pass topologies were realized for these V-band MMIC amplifiers.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; military equipment; 4.5 to 20 dB; 4.5 to 5.3 dB; 60 GHz; AlGaAs-GaAs; EHF; HEMT; InGaAs-GaAs pseudomorphic materials; LNA; MM-wave type; MMIC; V-band; bandpass topology; communication applications; high-electron-mobility transistor; low-noise amplifiers; military electronic warfare; millimetre wave operation; monolithic microwave integrated circuit; quasi-low-pass topologies; single stage type; three-stage version; two-stage type; Electronic warfare; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; MODFETs; Microwave communication; Military communication; Noise figure;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69302
