Title :
Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications
Author :
Inumiya, S. ; Sekine, K. ; Niwa, S. ; Kaneko, A. ; Sato, M. ; Watanabe, T. ; Fukui, H. ; Kamata, Y. ; Koyama, Masanori ; Nishiyama, A. ; Takayanagi, M. ; Eguchi, K. ; Tsunashima, Y.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVD Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.
Keywords :
CVD coatings; MOS capacitors; MOSFET; dielectric materials; dielectric thin films; electron mobility; hafnium compounds; hole mobility; nitridation; oxidation; plasma materials processing; 65 nm; CMOS applications; CVD; Hf silicate; HfSiON; HfSiON gate dielectrics; electron mobility; hole mobility; nitridation; plasma oxidation; CMOS process; Dielectrics; Fabrication; Hafnium; Nitrogen; Oxidation; Plasma applications; Plasma materials processing; Plasma properties; Plasma stability;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221064
