Title :
Highly manufacturable SONOS non-volatile memory for the embedded SoC solution
Author :
Kim, J.-H. ; Cho, I.W. ; Bae, G.J. ; Kim, S.S. ; Kim, K.C. ; Kim, S.H. ; Koh, K.W. ; Lee, N.I. ; Kang, H.-K. ; Suh, K.-P. ; Kang, S.T. ; Seo, M.K. ; Lee, S.H. ; Kim, M.C. ; Park, I.S.
Author_Institution :
Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
A new Local SONOS structure has been proposed for an embedded NVM cell in 0.13 /spl mu/m standard CMOS logic process. The localized storage silicon nitride layer of Local SONOS cell provides the essential properties for the embedded NVM such as the complete erase, low program current, and high on cell current from the low threshold voltage. The entire embedded memory solution has been realized with 0.276 /spl mu/m/sup 2/ Local SONOS NVM cell, which has 20 /spl mu/s program and 2 ms erase speed under 5.5 V bias condition, and good reliability without the special algorithms and cell array modifications.
Keywords :
CMOS logic circuits; integrated circuit reliability; random-access storage; silicon compounds; system-on-chip; 0.13 micron; 2 ms; 20 mus; 5.5 V; CMOS logic process; SONOS; SiN; cell array; embedded NVM cell; embedded memory SoC solution; localized storage silicon nitride layer; reliability; silicon oxide nitride oxide silicon nonvolatile memory; threshold voltage; CMOS logic circuits; CMOS process; Large scale integration; Logic arrays; Manufacturing; Nonvolatile memory; Programmable logic arrays; SONOS devices; Standards development; Threshold voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221071
