Title :
The impact of oxynitride process, deuterium annealing and STI stress to1/f noise of 0.11 /spl mu/m CMOS
Author :
Ohguro, T. ; Okayama, Y. ; Matsuzawa, K. ; Matsunaga, K. ; Aoki, N. ; Kojima, K. ; Momose, H.S. ; Ishimaru, K.
Author_Institution :
Toshiba Corp., Kanagawa, Japan
Abstract :
In this paper, it is shown that the 1/f noise is improved by plasma nitridation instead of NO annealing and deuterium annealing after metal formation. Additionally, dependence of the noise on distance between gate electrode and STI edge is reported for the first time.
Keywords :
1/f noise; CMOS integrated circuits; annealing; deuterium; isolation technology; nitridation; nitrogen compounds; plasma materials processing; 0.11 micron; 1/f noise; CMOS; D/sub 2/; NO; STI stress; deuterium annealing; gate electrode; metal formation; oxynitride process; plasma nitridation; Annealing; CMOS process; Degradation; Deuterium; Electrodes; MOS devices; Noise figure; Noise measurement; Plasma measurements; Stress;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221074
