Title :
Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics
Author :
Hughart, David R. ; Flicker, J.D. ; Atcitty, S. ; Marinella, Matthew J. ; Kaplar, R.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of -20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage.
Keywords :
MOSFET; interface states; sensitivity analysis; silicon compounds; DIT; MOSFET; SiC; energy level; interface trap density; sensitivity analysis; subthreshold characteristics; temperature 175 degC; threshold voltage; time 30 min; voltage -20 V; Doping; Energy states; MOSFET; Silicon carbide; Stress; Threshold voltage; Transconductance; elevated temperature; interface traps; power electronics; reliability; silicon carbide; subthreshold slope;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860589
