DocumentCode
186702
Title
New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges
Author
Fen Chen ; Graas, Carole ; Shinosky, M. ; Griffin, Christopher ; Dufresne, R. ; Bolam, Ronald ; Christiansen, C. ; Kai Zhao ; Narasimha, S. ; Chunyan Tian ; Choon-Leong Lou
Author_Institution
IBM Microelectron., Essex Junction, VT, USA
fYear
2014
fDate
1-5 June 2014
Abstract
Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables induced by process steps such as lithography, etch, CMP, cleaning, and thin film deposition. The traditional method of stressing one DUT per die or multiple DUTs per die, without careful data deconvolution, is incapable of addressing current complex MOL PC-CA and BEOL low-k dielectric breakdown modeling challenges. In this paper, a new big data generation method plus an analytics procedure method is proposed to soundly evaluate both MOL and BEOL dielectric time-dependent-dielectric breakdown data. A new diagnostic reliability concept is for the first time proposed for comprehensive process diagnostics and more accurate reliability failure rate determination.
Keywords
Weibull distribution; electric breakdown; low-k dielectric thin films; semiconductor device reliability; BEOL; breakdown data generation; diagnostic reliability concept; dielectric TDDB process development; low-k dielectric breakdown data; Big data; Compounds; Deconvolution; Dielectrics; Electric breakdown; Fitting; Reliability; MOL; PC-CA breakdown; compound Poisson area scaling; compound Weibull distribution; data deconvolution; global die-to-die variation; local within chip variation; low-k TDDB; low-k reliability; voltage acceleration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6860610
Filename
6860610
Link To Document