DocumentCode
186722
Title
Aluminum charge/dipole passivation induced by hydrogen diffusion in high-k metal gate
Author
Ribes, G. ; Barral, V. ; Chhun, S. ; Gros-Jean, M. ; Caubet, P. ; Petit, D.
Author_Institution
STMicroelectron., Crolles, France
fYear
2014
fDate
1-5 June 2014
Abstract
In this study, we have analyzed the influence of different high-k (HK), interfacial layer (IL) and metal gate on the Al effect. We show that hydrogen diffusion during the BEOL process can suppress totally the Al effect on work function. Solutions to stabilize the Al effect with respect to hydrogen diffusion are proposed and a model explaining the hydrogen and Al interaction is provided.
Keywords
aluminium; diffusion; high-k dielectric thin films; hydrogen; passivation; work function; Al; BEOL process; aluminum charge-dipole passivation; high-k metal gate; hydrogen diffusion; interfacial layer; work function; Annealing; High K dielectric materials; Hydrogen; Logic gates; Passivation; Tin; Aluminium; High-K; hydrogen; metal gate;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6860622
Filename
6860622
Link To Document